Measurement of Figure of Merit for a Single β-Silicon Carbide Nanowire by the Four-Point Three-ω Method
نویسندگان
چکیده
The thermoelectric figure of merit (ZT) of a single β-Silicon Carbide (SiC) nanowire (NW) was measured using the four-point three-omega (3-ω) method for the first time. The electrical conductivity (σ), thermal conductivity (κ), and Seebeck coefficient (S) were measured on the same measurement platform consisting of four point probe. To this end, we developed a novel technique in which focused ion beam (FIB) lithography and nanomanipulation are employed for fabricating a measurement platform and placing a single NW.
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